1N5660Ae3/TR

Le immagini sono solo di riferimento

specificazioni

fabbricante
Microchip Technology
categorie
ESD Suppressors / TVS Diodes
Breakdown Voltage
124 V
Cd - Diode Capacitance
-
Clamping Voltage
179 V
Ipp - Peak Pulse Current
8.4 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Number of Channels
1 Channel
Package / Case
DO-13-2
Packaging
Reel
Polarity
Unidirectional
Pppm - Peak Pulse Power Dissipation
1.5 kW
Product Type
TVS Diodes
Termination Style
Axial
Vesd - Voltage ESD Air Gap
-
Vesd - Voltage ESD Contact
-
Working Voltage
111 V

Ultime Recensioni

Thanks for your feedback!

High Quality driver, works excellent. It came to Moscow for 7 days.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

Works. Recommend

Potrebbe piacerti anche

1N5610e3
Microchip Technology
1N5610e3
Microchip Technology
1N5611
Microchip Technology
1N5611
Microchip Technology

Persone che visualizzano 1N5660Ae3/TR quindi acquistato

1N5610e3
Microchip Technology
1N5610e3
Microchip Technology
1N5611
Microchip Technology
1N5611
Microchip Technology

Parole chiave correlate per 1N56

  • 1N5660Ae3/TR integrato
  • 1N5660Ae3/TR RoHS
  • 1N5660Ae3/TR Scheda tecnica PDF
  • 1N5660Ae3/TR Scheda dati
  • 1N5660Ae3/TR Parte
  • 1N5660Ae3/TR Acquistare
  • 1N5660Ae3/TR Distributore
  • 1N5660Ae3/TR PDF
  • 1N5660Ae3/TR Componente
  • 1N5660Ae3/TR circuiti integrati
  • 1N5660Ae3/TR Scarica il pdf
  • 1N5660Ae3/TR Scarica la scheda tecnica
  • 1N5660Ae3/TR Fornitura
  • 1N5660Ae3/TR Fornitore
  • 1N5660Ae3/TR Prezzo
  • 1N5660Ae3/TR Scheda dati
  • 1N5660Ae3/TR Immagine
  • 1N5660Ae3/TR Immagine
  • 1N5660Ae3/TR Inventario
  • 1N5660Ae3/TR Azione
  • 1N5660Ae3/TR Originale
  • 1N5660Ae3/TR Cheapest
  • 1N5660Ae3/TR Eccellente
  • 1N5660Ae3/TR Senza piombo
  • 1N5660Ae3/TR specificazione
  • 1N5660Ae3/TR Offerte speciali
  • 1N5660Ae3/TR Prezzo di rottura
  • 1N5660Ae3/TR Dati tecnici