1N8182e3

Le immagini sono solo di riferimento

specificazioni

fabbricante
Microchip Technology
categorie
ESD Suppressors / TVS Diodes
Breakdown Voltage
190 V
Cd - Diode Capacitance
4 pF
Clamping Voltage
294 V
Ipp - Peak Pulse Current
510 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Number of Channels
1 Channel
Package / Case
A-Package-2
Polarity
Unidirectional
Pppm - Peak Pulse Power Dissipation
150 W
Product Type
TVS Diodes
Termination Style
Axial
Vesd - Voltage ESD Air Gap
-
Vesd - Voltage ESD Contact
-
Working Voltage
170 V

Ultime Recensioni

Quickly came to CET, all in one package. Look at the rules

packed pretty good, all is ok,-seller.

Everything is excellent! recommend this seller!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Fast shippng. Good quality. I recomend this seller.

Potrebbe piacerti anche

1N8147
Microchip Technology
1N8147
Microchip Technology
1N8147e3
Microchip Technology
1N8147e3
Microchip Technology

Persone che visualizzano 1N8182e3 quindi acquistato

1N8147
Microchip Technology
1N8147
Microchip Technology
1N8147e3
Microchip Technology
1N8147e3
Microchip Technology

Parole chiave correlate per 1N81

  • 1N8182e3 integrato
  • 1N8182e3 RoHS
  • 1N8182e3 Scheda tecnica PDF
  • 1N8182e3 Scheda dati
  • 1N8182e3 Parte
  • 1N8182e3 Acquistare
  • 1N8182e3 Distributore
  • 1N8182e3 PDF
  • 1N8182e3 Componente
  • 1N8182e3 circuiti integrati
  • 1N8182e3 Scarica il pdf
  • 1N8182e3 Scarica la scheda tecnica
  • 1N8182e3 Fornitura
  • 1N8182e3 Fornitore
  • 1N8182e3 Prezzo
  • 1N8182e3 Scheda dati
  • 1N8182e3 Immagine
  • 1N8182e3 Immagine
  • 1N8182e3 Inventario
  • 1N8182e3 Azione
  • 1N8182e3 Originale
  • 1N8182e3 Cheapest
  • 1N8182e3 Eccellente
  • 1N8182e3 Senza piombo
  • 1N8182e3 specificazione
  • 1N8182e3 Offerte speciali
  • 1N8182e3 Prezzo di rottura
  • 1N8182e3 Dati tecnici