- Numero di parte
- HN1A01FE-GR,LF
- fabbricante
- Toshiba
- categorie
- Bipolar Transistors - BJT
- RoHS
- Scheda dati
- Descrizione
- Bipolar Transistors - BJT Bias Resistor Built-in transistor
HN1A01FE-GR,LF
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- Toshiba
- categorie
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- - 50 V
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector-Emitter Saturation Voltage
- - 0.3 V
- Emitter- Base Voltage VEBO
- - 5 V
- Gain Bandwidth Product fT
- 80 MHz
- Maximum DC Collector Current
- - 150 mA
- Mounting Style
- SMD/SMT
- Package / Case
- ES6-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 100 mW
- Qualification
- AEC-Q101
- Series
- HN1A01
- Transistor Polarity
- PNP
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Ultime Recensioni
Takes 8 days to Japan. Good!
Alex Fragkos
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Looks good
Michael Beck
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Persone che visualizzano HN1A01FE-GR,LF quindi acquistato
Toshiba
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HN1A01FE-GR,LF Notizie
03/14/2023
03/13/2023
03/09/2023
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