Numero di parte FZ1800R45HL4S7BPSA1 fabbricante Infineon Technologies categorie IGBT Modules RoHS Scheda dati FZ1800R45HL4S7BPSA1 Descrizione IGBT Modules IHV IHM T XHP 3 3-6 5K
fabbricante Infineon Technologies categorie IGBT Modules Collector- Emitter Voltage VCEO Max 4.5 kV Collector-Emitter Saturation Voltage 2.15 V Configuration Single Gate-Emitter Leakage Current 400 nA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Packaging Tray Pd - Power Dissipation 4000 kW Product IGBT Silicon Modules