- Numero di parte
- GS-065-011-2-L-MR
- fabbricante
- GaN Systems
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 650V, 11A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
GS-065-011-2-L-MR
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- GaN Systems
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 11 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- PDFN-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- -
- Qg - Gate Charge
- 2 NC
- Rds On - Drain-Source Resistance
- 150 mOhms
- Technology
- GaN-on-Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
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Ultime Recensioni
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
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GS-065-011-2-L-MR Notizie
03/14/2023
03/13/2023
03/09/2023
Parole chiave correlate per GS-0
- GS-065-011-2-L-MR integrato
- GS-065-011-2-L-MR RoHS
- GS-065-011-2-L-MR Scheda tecnica PDF
- GS-065-011-2-L-MR Scheda dati
- GS-065-011-2-L-MR Parte
- GS-065-011-2-L-MR Acquistare
- GS-065-011-2-L-MR Distributore
- GS-065-011-2-L-MR PDF
- GS-065-011-2-L-MR Componente
- GS-065-011-2-L-MR circuiti integrati
- GS-065-011-2-L-MR Scarica il pdf
- GS-065-011-2-L-MR Scarica la scheda tecnica
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