- Numero di parte
- D3S099N65B-U
- fabbricante
- D3 Semiconductor
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220
D3S099N65B-U
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- D3 Semiconductor
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 35.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 281 W
- Qg - Gate Charge
- 62.6 nC
- Rds On - Drain-Source Resistance
- 90 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 2.3 V
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Ultime Recensioni
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Hello! Order received, very happy. Thank you very much!
Flavia
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
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D3S099N65B-U Notizie
03/14/2023
03/13/2023
03/09/2023
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