Numero di parte D3S280N65B-U fabbricante D3 Semiconductor categorie MOSFET RoHS Scheda dati D3S280N65B-U Descrizione MOSFET 280 mOhm 650V Superjunction Power MOSFET in TO-220
fabbricante D3 Semiconductor categorie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 99 W Qg - Gate Charge 22.2 nC Rds On - Drain-Source Resistance 260 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.3 V