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IPD80R450P7ATMA1

IPD80R450P7ATMA1
Le immagini sono solo di riferimento
Numero di parte
IPD80R450P7ATMA1
fabbricante
Infineon Technologies
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET LOW POWER_NEW
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specificazioni

fabbricante
Infineon Technologies
categorie
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 50 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Cut Tape, Reel
Pd - Power Dissipation
73 W
Qg - Gate Charge
24 nC
Rds On - Drain-Source Resistance
450 mOhms
Technology
SI
Tradename
CoolMOS
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Di Più

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IPD80R450P7ATMA1 Notizie

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