- Numero di parte
- R8010ANX
- fabbricante
- ROHM Semiconductor
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 10V Drive Nch MOSFET
R8010ANX
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- ROHM Semiconductor
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220FP-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 40 W
- Qg - Gate Charge
- 62 nC
- Rds On - Drain-Source Resistance
- 560 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
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Ultime Recensioni
Teşekkürler
Ashir Hussain
Takes 8 days to Japan. Good!
Alex Fragkos
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Potrebbe piacerti anche
ROHM Semiconductor
ROHM Semiconductor
Persone che visualizzano R8010ANX quindi acquistato
ROHM Semiconductor
ROHM Semiconductor
R8010ANX Notizie
03/14/2023
03/13/2023
03/09/2023
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