- Numero di parte
- TP65H070LSG-TR
- fabbricante
- Transphorm
- categorie
- RF JFET Transistors
- RoHS
- Scheda dati
- Descrizione
- RF JFET Transistors GAN FET 650V 25A PQFN88
TP65H070LSG-TR
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- Transphorm
- categorie
- RF JFET Transistors
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- PQFN-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 96 W
- Technology
- GaN
- Transistor Polarity
- N-Channel
- Transistor Type
- HEMT
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Breakdown Voltage
- - 20 V, + 20 V
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23,394 Prodotti
Ultime Recensioni
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
fast delivery
Mike Ibarra
TP65H070LSG-TR Notizie
03/14/2023
03/13/2023
03/09/2023
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