TP65H300G4LSG-TR

Le immagini sono solo di riferimento
Numero di parte
TP65H300G4LSG-TR
fabbricante
Transphorm
categorie
RF JFET Transistors
RoHS
Scheda dati
Descrizione
RF JFET Transistors GAN FET 650V 6.5A PQFN88

specificazioni

fabbricante
Transphorm
categorie
RF JFET Transistors
Id - Continuous Drain Current
6.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Reel
Pd - Power Dissipation
21 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 18 V, + 18 V

Ultime Recensioni

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Hello! Order received, very happy. Thank you very much!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Received very good

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