Numero di parte TP65H070LDG-TR fabbricante Transphorm categorie RF JFET Transistors RoHS Scheda dati TP65H070LDG-TR Descrizione RF JFET Transistors 227-TP65H070LSG-TR
fabbricante Transphorm categorie RF JFET Transistors Id - Continuous Drain Current 25 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PQFN-8 Packaging Reel Pd - Power Dissipation 96 W Technology GaN Transistor Polarity N-Channel Transistor Type HEMT Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Breakdown Voltage - 20 V, + 20 V