TP65H070LDG-TR

Le immagini sono solo di riferimento
Numero di parte
TP65H070LDG-TR
fabbricante
Transphorm
categorie
RF JFET Transistors
RoHS
Scheda dati
Descrizione
RF JFET Transistors 227-TP65H070LSG-TR

specificazioni

fabbricante
Transphorm
categorie
RF JFET Transistors
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Reel
Pd - Power Dissipation
96 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 20 V, + 20 V

Ultime Recensioni

goods very well received very good quality

fast delivery, item as described, thanks!!

Works. Find the price of this product is very good

Decent quality, not минвелл certainly, but enough decent

The goods are OK, thank you dealers.

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