- Numero di parte
- GES6014 TIN/LEAD
- fabbricante
- Central Semiconductor
- categorie
- Bipolar Transistors - BJT
- RoHS
- Scheda dati
- Descrizione
- Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0Vebo 625mW
GES6014 TIN/LEAD
Le immagini sono solo di riferimento
specificazioni
- fabbricante
- Central Semiconductor
- categorie
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 70 V
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Configuration
- Single
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 335 MHz
- Maximum DC Collector Current
- 1.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-92-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 1 W
- Series
- GES60
- Transistor Polarity
- NPN
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Ultime Recensioni
Teşekkürler
Ashir Hussain
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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GES6014 TIN/LEAD Notizie
03/14/2023
03/13/2023
03/09/2023
Parole chiave correlate per GES6
- GES6014 TIN/LEAD integrato
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- GES6014 TIN/LEAD Scheda tecnica PDF
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